Patriot Viper Elite 3200MHz CL16 PVE48G320C6KGY 2x8GB DDR4 Review: Overclocking for All
Using fast DDR4 memory was a privilege only a few could experience due to high cost initially but supply outpacing demand finally resulted in reasonable prices. Patriot’s new Viper Elite DDR4 modules are a welcome addition for Haswell-E as well as Skylake systems. What makes it even more appealing is that these kits are built to be even better performers than the previously released Patriot Viper 4 DDR4 modules (reviewed here) and are very affordable.
The Patriot Viper Elite DDR4 memory kit is available in dual-piece kits of 8GB, 16GB and 32GB with speeds ranging from 2300MHz to 3200MHz. It carries a lifetime warranty and is available in red, blue or gray heatspreader color variants.
The Patriot Viper Elite DDR4 kit package comes in a two-piece design consisting of an outer box and a see-through blister packaging inside. Users get a full preview of one of the modules on the front and back through the box cut-out. Inside the protective plastic packaging with the modules is a “Powered by Patriot” sticker. This sample in particular is a dual-channel 3200MHz CL16 kit that comes in a pair of 8GB modules (16GB kit) with a gray spine.
Each Patriot Viper Elite module measures 6.8mm x 133mm x 43mm, factoring in the aluminum heat spreader. Other than the gray, red or blue painted spine, the rest of the heatspreader is a shiny aluminum at the top and black towards the bottom. The top spine has partial airflow pass-through from the side.
Looking from the bottom reveals that the 8GB module is single-sided and removal of the heatspreader reveals the IC to be Samsung K4A8G085WB. The aluminum heatspreader is very easy to remove and the adhesive did not need to be heat treated for easier removal. There are no screws holding the heat spreaders or the spine in place like it is on the Patriot Viper 4 modules which has a more substantial heatsink.
The EEPROM containing the SPD and XMP data is located at the center and here are some of the relevant information extracted from inside (via Thaiphoon Burner):
| Module Manufacturer: | Patriot Memory |
| Module Part Number: | 3200 C16 Series |
| SDRAM Manufacturer: | Undefined |
| SDRAM Components: | Not determined |
| Module Manufacturing Date: | Undefined |
| Module Manufacturing Location: | Taipei, Taiwan |
| Module Serial Number: | 00000000h |
| Module PCB Revision: | 01h |
| SDRAM Stepping: | 00h |
| Fundamental Memory Class: | DDR4 SDRAM |
| Module Speed Grade: | DDR4-2133 |
| Base Module Type: | UDIMM (133.35 mm) |
| Module Capacity: | 8192 MB |
| Reference Raw Card: | A0 |
| Initial Raw Card Designer: | SK Hynix |
| Module Nominal Height: | 31 < H <= 32 mm |
| Module Thickness Maximum, Front: | 1 < T <= 2 mm |
| Module Thickness Maximum, Back: | T <= 1 mm |
| Number of DIMM Ranks: | 1 |
| Address Mapping from Edge Connector to DRAM: | Standard |
| SDRAM Device Package: | Standard Monolithic |
| SDRAM Device Package Type: | 78-ball FBGA |
| SDRAM Device Die Count: | Single die |
| Signal Loading: | Not specified |
| Number of Column Addresses: | 10 bits |
| Number of Row Addresses: | 16 bits |
| Number of Bank Addresses: | 2 bits (4 banks) |
| Bank Group Addressing: | 2 bits (4 groups) |
| SDRAM Device Width: | 8 bits |
| Programmed SDRAM Capacity: | 8 Gb |
| Calculated SDRAM Capacity: | 8 Gb |
| SDRAM Page Size: | 1 KB |
| Primary Memory Bus Width: | 64 bits |
| Memory Bus Width Extension: | 0 bits |
| SDRAM VDD 1.20 V operable/endurant: | Yes/Yes |
| Fine Timebase: | 0.001 ns |
| Medium Timebase: | 0.125 ns |
| CAS Latencies Supported: | 10T, 11T, 12T, 13T, 14T, 15T, 16T |
| SDRAM Minimum Cycle Time: | 0.938 ns |
| SDRAM Maximum Cycle Time: | 1.500 ns |
| Nominal SDRAM Clock Frequency: | 1066.10 MHz |
| Minimum SDRAM Clock Frequency: | 666.67 MHz |
| CAS# Latency Time (tAA min): | 13.500 ns |
| RAS# to CAS# Delay Time (tRCD min): | 13.500 ns |
| Row Precharge Delay Time (tRP min): | 13.500 ns |
| Active to Precharge Delay Time (tRAS min): | 33.000 ns |
| Act to Act/Refresh Delay Time (tRC min): | 46.500 ns |
| Normal Refresh Recovery Delay Time (tRFC1 min): | 350.000 ns |
| 2x mode Refresh Recovery Delay Time (tRFC2 min): | 260.000 ns |
| 4x mode Refresh Recovery Delay Time (tRFC4 min): | 160.000 ns |
| Short Row Active to Row Active Delay (tRRD_S min): | 3.700 ns |
| Long Row Active to Row Active Delay (tRRD_L min): | 5.300 ns |
| Long CAS to CAS Delay Time (tCCD_L min): | 5.625 ns |
| Four Active Windows Delay (tFAW min): | 21.000 ns |
| Maximum Active Window (tMAW): | 8192*tREFI |
| Maximum Activate Count (MAC): | Unlimited MAC |
| SDRAM Post Package Repair: | Not supported |
| Soft Post Package Repair: | Not supported |
| Module Thermal Sensor: | Not Incorporated |
| Manufacturer: | OnSemi |
| Model: | CAT34TS04 |
| Revision: | 00h |
| Temperature Monitor Status: | Active |
| Current Ambient Temperature: | 28.000°C |
| Sensor Resolution: | 0.0625°C |
| Accuracy at 75°C to 95°C: | ±1°C |
| Accuracy at 40°C to 125°C: | ±2°C |
| Open-drain Event Output: | Disabled |
| 10V of VHV on A0 pin: | Supported |
| Negative Temperature Measurements: | Supported |
| Interrupt capabilities: | Supported |
| SMBus timeout period for TS access: | 25 to 35 ms |
| SPD Revision: | 1.0 |
| SPD Bytes Total: | 512 |
| SPD Bytes Used: | 384 |
| SPD Checksum (Bytes 00h-7Dh): | 6355h (OK) |
| SPD Checksum (Bytes 80h-FDh): | B2ADh (OK) |
| JEDEC DIMM Label: | 8GB 1Rx8 PC4-2133-UA0-10 |
| FREQUENCY | CAS | RCD | RP | RAS | RC | RRDS | RRDL | CCDL | FAW |
|---|---|---|---|---|---|---|---|---|---|
| 1067 MHz | 16 | 15 | 15 | 36 | 50 | 4 | 6 | 6 | 23 |
| 1067 MHz | 15 | 15 | 15 | 36 | 50 | 4 | 6 | 6 | 23 |
| 933 MHz | 14 | 13 | 13 | 31 | 44 | 4 | 5 | 6 | 20 |
| 933 MHz | 13 | 13 | 13 | 31 | 44 | 4 | 5 | 6 | 20 |
| 800 MHz | 12 | 11 | 11 | 27 | 38 | 3 | 5 | 5 | 17 |
| 800 MHz | 11 | 11 | 11 | 27 | 38 | 3 | 5 | 5 | 17 |
| 667 MHz | 10 | 9 | 9 | 22 | 31 | 3 | 4 | 4 | 14 |
| Profiles Revision: 2.0 | ||
| Profile 1 (Certified) Enables: Yes | ||
| Profile 2 (Extreme) Enables: No | ||
| Profile 1 Channel Config: 1 DIMM/channel | ||
| XMP PARAMETER | PROFILE 1 | PROFILE 2 |
|---|---|---|
| Speed Grade: | DDR4-3200 | N/A |
| RAM Clock Frequency: | 1600 MHz | N/A |
| Module VDD Voltage Level: | 1.35 V | N/A |
| Minimum SDRAM Cycle Time (tCK): | 0.625 ns | N/A |
| CAS Latencies Supported: | 17T,16T,15T,14T, 13T,12T,11T,9T |
N/A |
| CAS Latency Time (tAA): | 16T | N/A |
| RAS# to CAS# Delay Time (tRCD): | 16T | N/A |
| Row Precharge Delay Time (tRP): | 16T | N/A |
| Active to Precharge Delay Time (tRAS): | 36T | N/A |
| Active to Active/Refresh Delay Time (tRC): | 64T | N/A |
| Four Activate Window Delay Time (tFAW): | 36T | N/A |
| Short Activate to Activate Delay Time (tRRD_S): | 6T | N/A |
| Long Activate to Activate Delay Time (tRRD_L): | 9T | N/A |
| Normal Refresh Recovery Delay Time (tRFC1): | 560T | N/A |
| 2x mode Refresh Recovery Delay Time (tRFC2): | 416T | N/A |
| 4x mode Refresh Recovery Delay Time (tRFC4): | 256T | N/A |
